Photographer: SeongJoon Cho / Bloomberg
Photographer: SeongJoon Cho / Bloomberg
Samsung Electronics Co. announced plans for its next-generation memory chips that will double the speed of existing technology and offer the largest capacity to date, initiating a transition that will accelerate the growth of data centers and supercomputing.
The world’s largest memory chip maker said it has developed 512 GB DDR5 (Double Data Rate 5) memory modules based on a High-K Metal Gate (HKMG) manufacturing process that has traditionally been used in chips. logical. DDR5 memory will be twice as fast as current DDR4, reducing leaks and consuming approximately 13% less power.
Samsung expects the transition to DDR5 to begin in the second half of this year. The chip industry has been anticipating the adoption of the new memory standard and support for it will arrive. Intel Corp.’s next scalable Xeon processors, codenamed Sapphire Rapids. In addition to partnering with the two major CPU vendors, Intel and Advanced Micro Devices Inc., Samsung has sent samples of its new memory to data center platform developers, the company told Bloomberg News.
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Analysts estimate that DDR5 chips will be 20% larger than DDR4 chips, leading to increased pressure on semiconductor supply chains. Samsung intends to begin shipments this year and gradually evolve both its manufacturing processes (expanding the use of extreme ultraviolet lithography) and prices, which will include a premium for the first period. The crossover between DDR4 and DDR5 will occur in the second half of 2023, the Suwon-based company said.
“As the DDR5 penetration rate gradually increases, DRAM shortages are expected to persist in 2022,” said Avril Wu, vice president of TrendForce Research. “We also expect a price increase of 30-40% initially.”